This paper proposes SiC MOSFET gate ageing-laws under repetitive short-circuit stress. Based on analytical studies, physical forms and preconditioning data, numerical fitting based on stress variables ΔT_j, T_{Pulse Gate Damage %} and E_sc is proposed. Accuracy and prediction capabilities of ageing-laws have been evaluated and compared. Resulting in suggesting a new ageing-law based on ΔT_{Al_Top} metal-source. This one gives the best fitting accuracy. Finally, the ageing-law based directly on the short-circuit energy E_sc appears to have the best in prediction capability.

中文翻译：

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重复短路应力下 SiC MOSFET 的预测栅极老化规律

本文提出了反复短路应力下的 ​​SiC MOSFET 栅极老化规律。基于分析研究、物理形态和预处理数据，提出了基于应力变量ΔT _j、 T _{Pulse Gate Damage %}和E _sc的数值拟合。对老化规律的准确性和预测能力进行了评估和比较。从而提出了基于 ΔT _{Al_Top}金属源的新老化定律。这提供了最佳的拟合精度。最后，直接基于短路能量 E _sc的老化定律似乎具有最好的预测能力。