In the GOA (Gate on Array) circuits, which are commonly employed in LCD (Liquid Crystal Display) products, the metal wire layers have been found to be sensitive to ESD (Electrostatic Discharge) in production, leading to an increase in the failure rate of GOA products, especially in T-shaped wiring structures. In this paper, we conducted a study on the relationship between the ESD failure voltage and structure parameters of T-shaped wiring structures in GOA products to enhance their reliability. We established an ESD failure voltage model for T-shaped wiring structures based on the relevant electrical breakdown theory. And failure voltage and gap breakdown voltage data are required for accurate model parameters fitting. Hence, ESD tests on the T-shaped wiring structure samples were conducted. In addition, ESD simulation of T-shaped wiring structure using CST software was applied to supply gap voltage data unavailable from tests. Based on the results of the tests and simulation, parameters of the ESD failure voltage model were fitted. And we performed the model modification using verification tests for higher accuracy. The results show that our model errors are below 5 %. Guided by the ESD failure voltage model, a more reliable T-shaped structure can be produced in GOA.

在LCD（Liquid Crystal Display）产品中常用的GOA（Gate on Array）电路中，发现金属线层在生产中对ESD（Electrostatic Discharge）敏感，导致故障率增加GOA 产品，尤其是 T 形布线结构。在本文中，我们对 GOA 产品中 T 形布线结构的 ESD 失效电压与结构参数之间的关系进行了研究，以提高其可靠性。我们基于相关的电击穿理论建立了T型布线结构的ESD失效电压模型。准确的模型参数拟合需要失效电压和间隙击穿电压数据。因此，对T形布线结构样品进行了ESD测试。此外，使用 CST 软件对 T 形布线结构进行 ESD 模拟，以提供测试中无法获得的间隙电压数据。根据测试和仿真结果，拟合了ESD失效电压模型的参数。我们使用验证测​​试进行模型修改以获得更高的准确性。结果表明，我们的模型误差低于 5%。以ESD失效电压模型为指导，可以在GOA中生产出更可靠的T形结构。