A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS₂ and WSe₂ heterojunction is developed. The characteristic Λ-shaped transfer curves yielded by the bottom-gate voltage are effectively controlled by the top-gate voltage. This feature is applied to logic operations, with the bottom- and top-gate voltages acting as two input signals and the drain current (I_d) monitored as an output signal. Importantly, a single dual-gate AAT exhibits all the two-input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, drain voltage (V_d)-induced switching between AND and OR logic operations is achieved. These features are advantageous for simplifying circuit design.

中文翻译：

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具有范德瓦尔斯 ReS2/WSe2 异质结的双栅极反双极晶体管，用于可重构逻辑操作

开发了具有二维 ReS ₂和 WSe ₂异质结的双栅极反双极晶体管 (AAT)。由底栅电压产生的特征 Λ 形转移曲线受到顶栅电压的有效控制。此功能适用于逻辑运算，底栅电压和顶栅电压充当两个输入信号，漏极电流 ( _Id )被监控为输出信号。重要的是，单个双门 AAT 在优化的输入电压下展示了所有双输入逻辑运算（AND、OR、XOR、NAND、NOR 和 XNOR）。此外，漏极电压 ( V _d) 实现了 AND 和 OR 逻辑运算之间的诱导切换。这些特点有利于简化电路设计。