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Integrated acoustic resonators in commercial fin field-effect transistor technology
Nature Electronics ( IF 34.3 ) Pub Date : 2022-09-23 , DOI: 10.1038/s41928-022-00827-6
Jackson Anderson, Yanbo He, Bichoy Bahr, Dana Weinstein

In radio communication, the growth of beamforming and multiple-input–multiple-output technologies, which increase transceiver complexity, have led to a drive to reduce the size, weight and power of radio components by integrating them into a single system on chip. One approach is to integrate the frequency references of acoustic microelectromechanical systems (MEMS) with complementary metal–oxide–semiconductor processes, typically through a MEMS-first or MEMS-last approach that requires process customization. Here we report unreleased acoustic resonators that are fabricated in 14 nm fin field-effect transistor technology and operate in the X-band frequency range (8–12 GHz). The devices use phononic waveguides for acoustic confinement and exploit metal–oxide–semiconductor capacitors and transistors to electromechanically drive and sense acoustic vibrations. Fifteen device variations are analysed across 30 bias points, quantifying the importance of phononic confinement on resonator performance and demonstrating the velocity-saturated piezoresistive effect in active resonant transistors. Our results illustrate the feasibility of integrating acoustic devices directly into standard complementary metal–oxide–semiconductor processes.



中文翻译:

商用翅片场效应晶体管技术中的集成声谐振器

在无线电通信中,波束成形和多输入-多输出技术的发展增加了收发器的复杂性,推动了通过将无线电组件集成到单个片上系统中来减小无线电组件的尺寸、重量和功率。一种方法是将声学微机电系统 (MEMS) 的频率参考与互补的金属氧化物半导体工艺集成,通常通过需要工艺定制的 MEMS 优先或 MEMS 后方法。在这里,我们报告了采用 14 nm 鳍式场效应晶体管技术制造并在 X 波段频率范围(8-12 GHz)中工作的未发布的声学谐振器。这些设备使用声子波导进行声学限制,并利用金属氧化物半导体电容器和晶体管以机电方式驱动和感知声学振动。分析了 30 个偏置点的 15 种器件变化,量化了声子限制对谐振器性能的重要性,并展示了有源谐振晶体管中的速度饱和压阻效应。我们的结果说明了将声学器件直接集成到标准互补金属氧化物半导体工艺中的可行性。

更新日期:2022-09-24
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