Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems¹. Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials². Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles³. Here, we introduce graphene nanopatterns as an advanced heterointegration platform that allows the creation of a broad spectrum of freestanding single-crystalline membranes with substantially reduced defects, ranging from non-polar materials to polar materials and from low-bandgap to high-bandgap semiconductors. Additionally, we unveil unique mechanisms to substantially reduce crystallographic defects such as misfit dislocations, threading dislocations and antiphase boundaries in lattice- and polarity-mismatched heteroepitaxial systems, owing to the flexibility and chemical inertness of graphene nanopatterns. More importantly, we develop a comprehensive mechanics theory to precisely guide cracks through the graphene layer, and demonstrate the successful exfoliation of any epitaxial overlayers grown on the graphene nanopatterns. Thus, this approach has the potential to revolutionize the heterogeneous integration of dissimilar materials by widening the choice of materials and offering flexibility in designing heterointegrated systems.

单晶材料的异质集成为先进的器件平台和功能系统¹提供了巨大的机会。尽管通过异质外延共集成有源器件层已经做出了巨大努力，但晶格极性和晶格常数的不匹配一直限制着生长材料的质量²。另一方面，作为替代方法的层转移方法受到可转移材料的有限可用性和转移过程相关障碍的影响³. 在这里，我们将石墨烯纳米图案作为一种先进的异质整合平台引入，该平台允许创建广泛的独立单晶膜，其缺陷大大减少，从非极性材料到极性材料，从低带隙到高带隙半导体。此外，由于石墨烯纳米图案的柔韧性和化学惰性，我们揭示了独特的机制来显着减少晶格和极性不匹配的异质外延系统中的错配位错、螺纹位错和反相边界等晶体缺陷。更重要的是，我们开发了一种全面的力学理论来精确地引导裂缝穿过石墨烯层，并展示了在石墨烯纳米图案上生长的任何外延覆盖层的成功剥离。因此，