Abstract

The structures of devices based on both an insulated-gate field-effect transistor and a bipolar transistor are proposed and theoretically investigated. The main design feature of the devices is that the drain and collector electrodes are made in the form of MOS capacitors. The manufacturing of devices does not require changes in the standard technological routes. Distributed equivalent circuits of devices are constructed, taking into account their design and technological features. SPICE-models of devices are developed and the parameters of these models are identified on numerical examples. The considered devices are elementary high-pass filters and have wide-ranging prospects for application in analog electronics.

中文翻译：

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有源积分高通滤波器

摘要

提出并理论研究了基于绝缘栅场效应晶体管和双极晶体管的器件结构。该器件的主要设计特点是漏极和集电极采用MOS电容的形式。设备的制造不需要改变标准的技术路线。考虑到设备的设计和技术特征，构建了设备的分布式等效电路。开发了设备的 SPICE 模型，并在数值示例中确定了这些模型的参数。所考虑的器件是基本的高通滤波器，在模拟电子学中具有广泛的应用前景。