Russian Microelectronics Pub Date : 2022-09-08 , DOI: 10.1134/s1063739722050080 S. V. Rumyantsev, A. S. Novoselov, N. V. Masalsky
Abstract
The results of studying the contribution of the self-heating mechanism to the CVCs of high-power LDMOS (laterally diffused metal oxide semiconductor) transistors made according to the silicon-on-insulator technology with a long drift region with topological norms of 0.5 microns at high control voltages are discussed. It is shown that the action of this mechanism significantly changes the CVC of n- and p-type transistors. Differences in the influence of the self-heating mechanism on the characteristics of transistors of the n- and p-type are determined. The results obtained also open up new opportunities for improving the characteristics of microcircuits during their development and methods for further improvement of the LDMOS technology.
中文翻译:
大漂移区高压 SOI 晶体管自热效应研究
摘要
研究自热机制对大功率LDMOS(横向扩散金属氧化物半导体)晶体管CVCs的贡献的结果,该晶体管是根据绝缘体上硅技术制造的,具有长漂移区,拓扑规范为0.5微米讨论了高控制电压。结果表明,这种机制的作用显着改变了n型和p型晶体管的 CVC。自热机制对n-和p晶体管特性影响的差异-type 确定。获得的结果也为改善微电路在开发过程中的特性和进一步改进LDMOS技术的方法开辟了新的机会。