Memristor crossbar arrays can compose the efficient hardware for artificial intelligent applications. However, the requirements for a linear and symmetric synaptic weight update and low cycle-to-cycle (C2C) and device-to-device variability as well as the sneak-path current issue have been delaying its further development. This study reports on a thin-film amorphous oxide-based 4×4 1-transistor 1-memristor (1T1M) crossbar. The a-IGZO crossbar is built on a flexible polyimide substrate, enabling IoT and wearable applications. In the novel framework, the thin-film transistor and memristor are fabricated at the same level, with the same processing steps and sharing the same materials for all layers. The 1T1M cells show linear and symmetrical plasticity characteristic with low C2C variability. The memristor performs like an analog dot product engine and vector–matrix multiplications in the 4×4 crossbars is demonstrated experimentally, in which the sneak-path current issue is successfully suppressed, resulting in a proof-of-concept for a cost-effective, flexible artificial neural networks hardware.

中文翻译：

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使用非晶氧化物半导体技术的柔性有源交叉开关阵列用于人工神经网络硬件

忆阻器交叉阵列可以构成人工智能应用的高效硬件。然而，对线性和对称突触权重更新、低周期到周期 (C2C) 和设备到设备的可变性以及潜行路径电流问题的要求一直在延迟其进一步发展。本研究报告了基于薄膜非晶氧化物的 4×4 1 晶体管 1 忆阻器 (1T1M) 交叉开关。a-IGZO 交叉开关建立在柔性聚酰亚胺基板上，支持物联网和可穿戴应用。在新的框架中，薄膜晶体管和忆阻器在同一水平上制造，具有相同的工艺步骤，并且所有层都使用相同的材​​料。1T1M 细胞表现出线性和对称的可塑性特征，具有低 C2C 变异性。