A theoretical study on the rise of photo-oscillations in the magnetoresistance of hexagonal boron nitride (hBN)-encapsulated graphene is presented. The previous radiation-driven electron orbit model devised to study the same oscillations, well-known as MIRO, in 2D semiconductor systems (GaAs/AlGaAS heterostructure) is used. It is obtained that these graphene platforms under radiation and a static magnetic field are sensitive to terahertz and far-infrared radiation. The power, temperature, and frequency dependences of the photo-oscillations are studied. For power dependence, it is predicted that for cleaner graphene and high enough power it is possible to observe zero-resistance states and a resonance peak.

中文翻译：

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封装石墨烯中太赫兹引起的振荡

提出了关于六方氮化硼 (hBN) 封装石墨烯磁阻中光振荡上升的理论研究。使用之前设计用于研究二维半导体系统（GaAs/AlGaAS 异质结构）中相同振荡的辐射驱动电子轨道模型，即众所周知的 MIRO。结果表明，这些在辐射和静磁场下的石墨烯平台对太赫兹和远红外辐射敏感。研究了光振荡的功率、温度和频率依赖性。对于功率依赖性，预计对于更清洁的石墨烯和足够高的功率，可以观察到零电阻状态和共振峰。