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Analysis of Fast-Scale Instability in Three-Level T-Type Single-Phase Inverter Feeding Diode-Bridge Rectifier With Inductive Load
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2022-07-28 , DOI: 10.1109/tpel.2022.3194697
Hongbo Cao 1 , Faqiang Wang 1 , Jinjun Liu 1
Affiliation  

In this article, the fast-scale instability in the three-level T-type single-phase inverter feeding diode-bridge rectifier with inductive load (3TSI-DR) is studied. Simulations suggest that such fast-scale instability on switching period scale can increase the harmonic content in the 3TSI-DR, which seriously affects its stable operation. To reveal the mechanism of this fast-scale instability, the state equation of the 3TSI-DR is derived, and state variables are solved based on quasi-static approximation principle. From state equation, the 3TSI-DR is periodic time-varying and piecewise smooth, belonging to Filippov system. Accordingly, the discrete-time mapping model of the 3TSI-DR is established, Filippov method is used for obtaining monodromy matrix, and Floquet theory is applied to explore instability mechanism. Theoretical results indicate that the fast-scale instability of the 3TSI-DR is caused by period-doubling bifurcation. Moreover, the Floquet multiplier sensitivities of different circuit parameters are calculated to identify key parameters; via comparing theoretical analyses with simulations, the unstable angle ranges of the fast-scale instability are given, and the stability boundaries in various parameter spaces are discussed. All these can provide design-oriented information for optimizing the 3TSI-DR to avoid instability due to period-doubling bifurcation. Finally, experimental results agreeing with simulations are presented to verify the correctness of theoretical analyses.

中文翻译:

感性负载三电平T型单相逆变馈电桥式整流器的快速尺度不稳定性分析

本文研究了带感性负载的三电平T型单相逆变馈电二极管桥式整流器(3TSI-DR)的快速尺度不稳定性。模拟表明,开关周期尺度上的这种快速尺度不稳定性会增加 3TSI-DR 中的谐波含量,从而严重影响其稳定运行。为了揭示这种快速尺度不稳定性的机制,推导了3TSI-DR的状态方程,并基于准静态逼近原理求解了状态变量。从状态方程来看,3TSI-DR是周期性时变分段平滑的,属于Filipov系统。据此,建立了3TSI-DR的离散时间映射模型,利用Filippov方法获得单调矩阵,并应用Floquet理论探索不稳定性机制。理论结果表明,3TSI-DR的快速尺度不稳定性是由倍周期分岔引起的。此外,计算了不同电路参数的Floquet乘法器灵敏度,以识别关键参数;通过理论分析与仿真对比,给出了快速尺度不稳定的不稳定角度范围,并讨论了各种参数空间中的稳定边界。所有这些都可以为优化 3TSI-DR 提供面向设计的信息,以避免由于倍周期分岔导致的不稳定。最后给出了与模拟结果一致的实验结果,以验证理论分析的正确性。计算不同电路参数的 Floquet 乘法器灵敏度,以识别关键参数;通过理论分析与仿真对比,给出了快速尺度不稳定的不稳定角度范围,并讨论了各种参数空间中的稳定边界。所有这些都可以为优化 3TSI-DR 提供面向设计的信息,以避免由于倍周期分岔导致的不稳定。最后给出了与模拟结果一致的实验结果,以验证理论分析的正确性。计算不同电路参数的 Floquet 乘法器灵敏度,以识别关键参数;通过理论分析与仿真对比,给出了快速尺度不稳定的不稳定角度范围,并讨论了各种参数空间中的稳定边界。所有这些都可以为优化 3TSI-DR 提供面向设计的信息,以避免由于倍周期分岔导致的不稳定。最后给出了与模拟结果一致的实验结果,以验证理论分析的正确性。所有这些都可以为优化 3TSI-DR 提供面向设计的信息,以避免由于倍周期分岔导致的不稳定。最后给出了与模拟结果一致的实验结果,以验证理论分析的正确性。所有这些都可以为优化 3TSI-DR 提供面向设计的信息,以避免由于倍周期分岔导致的不稳定。最后给出了与模拟结果一致的实验结果,以验证理论分析的正确性。
更新日期:2022-07-28
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