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Ambipolar Organic Field-Effect Transistors and Complementary Circuits Based on Single Crystals with Alcohol Treatment
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2022-08-28 , DOI: 10.1002/aelm.202200557
Chengce Lin 1 , Boyu Peng 1 , Jiake Wu 1 , Zhuoting Huang 1 , Min Chen 1 , Dapeng Hu 1 , Shifeng Ke 1 , Benjamin Chee Keong Tee 2 , Hanying Li 1
Affiliation  

Ambipolar organic field-effect transistors (OFETs) are promising candidates for compact organic complementary circuits. High and balanced ambipolar mobilities that facilitate high operation speed and simplifying layout designs, as well as symmetric electrodes that minimize fabrication complexity are critical integrities for state-of-art ambipolar OFETs. Organic single crystals with intrinsic ambipolar characteristics are ideal active layer materials because of the high molecular ordering and low density of defects, whereas the generally low electron mobility hindered their further implantation. In this work, the highly crystallized 6,13-bis(triisopropylsilylethynyl) pentacene single crystals are employed and successfully unveiled the intrinsic high electron mobility by a facile alcohol treatment approach. The resulting ambipolar OFETs showed averaged hole and electron mobilities both higher than 1 cm2 V−1 s−1 by a single type of metal electrode. The presented ambipolar OFETs not only improved the static and dynamic performance of ambipolar OFET-based complementary inverters and ring oscillators by showing a high voltage gain of 186 and a short stage delay time of 0.7 ms, but they also allowed one logic gate to show two logic functions and potentially benefit the design and functionalities of future OFET-based complementary circuits as well.

中文翻译:

酒精处理的基于单晶的双极有机场效应晶体管和互补电路

双极有机场效应晶体管 (OFET) 是紧凑型有机互补电路的有希望的候选者。促进高操作速度和简化布局设计的高且平衡的双极迁移率,以及最大限度地降低制造复杂性的对称电极是最先进的双极 OFET 的关键完整性。具有本征双极性特性的有机单晶是理想的有源层材料,因为它具有高分子有序性和低缺陷密度,而普遍低的电子迁移率阻碍了它们的进一步注入。在这项工作中,使用高度结晶的 6,13-​​双(三异丙基甲硅烷基乙炔基)并五苯单晶,并通过简便的醇处理方法成功揭示了固有的高电子迁移率。2 V -1 s -1通过单一类型的金属电极。所提出的双极 OFET 不仅通过显示 186 的高电压增益和 0.7 ms 的短级延迟时间改善了基于双极 OFET 的互补反相器和环形振荡器的静态和动态性能,而且它们还允许一个逻辑门显示两个逻辑功能,并可能有利于未来基于 OFET 的互补电路的设计和功能。
更新日期:2022-08-28
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