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Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate
Solid-State Electronics ( IF 1.7 ) Pub Date : 2022-08-28 , DOI: 10.1016/j.sse.2022.108446
Wan-Soo Park , Jun-Gyu Kim , Seung-Won Yun , Hyeon-Seok Jeong , Hyeon-Bhin Jo , Tae-Woo Kim , Takuya Tsutsumi , Hiroki Sugiyama , Hideaki Matsuzaki , Dae-Hyun Kim

In this work, we explored the effective mobility of In-rich InxGa1-xAs/In0.52Al0.48As (x > 0.53) quantum well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate. Historically, the carrier transport properties of these types of devices have been assessed mostly using their Hall mobility, not using the effective mobility, mainly because the excessive gate leakage current degrades and contaminates their measured capacitance voltage (CV) characteristics. However, our recent studies on these devices achieved a significant reduction in the gate leakage current, which motivated us to explore their effective mobility. In this work, therefore, we used a conventional split CV technique to determine and analyze the effective mobility of In0.8Ga0.2As/In0.52Al0.48As QW HEMTs. We also attempted to model the extracted effective mobility by considering three different scattering mechanisms—Coulombic scattering, phonon scattering and surface-roughness scattering— under the guidance of Matthiessen’s rule.



中文翻译:

InP衬底上In0.8Ga0.2As/In0.52Al0.48As量子阱高电子迁移率晶体管有效迁移率的提取

在这项工作中,我们探索了富 In x Ga 1-x As/In 0.52 Al 0.48 As ( x > 0.53) InP 衬底上的量子阱 (QW) 高电子迁移率晶体管 (HEMT)。从历史上看,这些类型的器件的载流子传输特性主要是使用它们的霍尔迁移率来评估的,而不是使用有效迁移率,主要是因为过大的栅极泄漏电流会降低并污染它们测量的电容电压 (CV) 特性。然而,我们最近对这些器件的研究显着降低了栅极漏电流,这促使我们探索它们的有效迁移率。因此,在这项工作中,我们使用传统的分裂 CV 技术来确定和分析 In 0.8 Ga 0.2 As/In 0.52 Al 0.48的有效迁移率作为 QW HEMT。我们还尝试在马蒂森规则的指导下,通过考虑三种不同的散射机制——库仑散射、声子散射和表面粗糙度散射——来模拟提取的有效迁移率。

更新日期:2022-08-28
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