Abstract

The present work focuses on the theoretical calculations of the ground-state binding energy of a shallow impurity, the impurity-related photoionization cross-section (PICS), and impurity-related polarizability under the combined effects of an electric field and hydrostatic pressure using a variational approach within the parabolic-band and effective-mass approximations. The low heterostructure is made up of two GaAs quantum dots separated by a Al\(_{0.3}\)Ga\(_{0.7}\)As central barrier. The applied electric field is considered to be directed along the growth-direction. As a general, the binding energy is obtained as a function of the impurity position and the electric field intensity. The PICS is calculated as a function of photon energy, for various impurity positions, with changes in hydrostatic pressure and/or electric field strength to prove their impact on their magnitude and shifting. Calculations are without accounting for the \(\Gamma -X\) effect of the GaAs/Al\(_{0.3}\)Ga\(_{0.7}\)As and for a specific nanostructure size. In addition, we have shown how variations in hydrostatic pressure and electric field affect the polarizability of impurities at three distinct places in the nanostructure.

Graphical abstract

中文翻译：

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静水压力和电场对双 GaAs/Ga $$_{1-x}$$ 1 - x Al $$_{x}$$ x As 中供体结合能、极化率和光电离截面的综合影响量子点

摘要

目前的工作侧重于使用 a抛物线带内的变分方法和有效质量近似。低异质结构由两个被 Al \(_{0.3}\) Ga \(_{0.7}\)隔开的 GaAs 量子点组成作为中央屏障。施加的电场被认为是沿生长方向定向的。一般来说，结合能是杂质位置和电场强度的函数。PICS 被计算为光子能量的函数，对于各种杂质位置，静水压力和/或电场强度的变化，以证明它们对它们的大小和偏移的影响。计算没有考虑GaAs/Al \(_{0.3}\) Ga \(_{0.7}\) As 和特定纳米结构尺寸的\(\Gamma -X\)效应。此外，我们还展示了静水压力和电场的变化如何影响纳米结构中三个不同位置的杂质极化率。

图形概要