A novel 2D layered material Ti₃C₂T_x (MXene) is favored by researchers in the application field of optoelectronics due to its tunable work function, great light transmittance, and excellent electrical conductivity. In this work, Ti₃C₂T_x/n-germanium (MXene/n-Ge) Schottky heterostructures are fabricated and investigated. Schottky contacts of MXene with n-Ge are identified by ultraviolet photoelectron spectroscopy (UPS). Based on the MXene/n-Ge Schottky junctions, an ultrafast, broadband, and self-powered photodetector is demonstrated and studied. The MXene/n-Ge device exhibits excellent photoresponse from ultraviolet to near-infrared light illumination. In particular, it shows an excellent on/off ratio (≈10⁴), a high responsivity (3.14 A/W), a larger specific detectivity (2.14 × 10¹¹ Jones), and an ultrafast response speed (t_rise of 1.4 µs and t_decay of 4.1 µs). Moreover, the MXene/n-Ge Schottky heterostructure photodetector also shows excellent low-temperature work characteristics of 73 K. It is believed that this work will attract more researchers’ attention to MXene in the field of optoelectronic devices.

中文翻译：

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用于超快宽带自驱动光电探测器的 MXene-锗肖特基异质结构

新型二维层状材料Ti ₃ C ₂ T _x (MXene)以其功函数可调、透光率高、导电性好等特点受到光电应用领域研究人员的青睐。在这项工作中，Ti ₃ C ₂ T _x制造并研究了 /n-锗 (MXene/n-Ge) 肖特基异质结构。通过紫外光电子能谱 (UPS) 识别 MXene 与 n-Ge 的肖特基接触。基于 MXene/n-Ge 肖特基结，展示和研究了一种超快、宽带和自供电光电探测器。MXene/n-Ge 器件表现出从紫外线到近红外光照明的出色光响应。特别是，它显示出出色的开/关比 (≈10 ⁴ )、高响应度 (3.14 A/W)、更大的比检测率 (2.14 × 10 ¹¹琼斯) 和超快响应速度 (t_上升1.4 µs)和_衰减4.1 微秒）。此外，MXene/n-Ge肖特基异质结构光电探测器还表现出优异的73K低温工作特性，相信该工作将吸引更多光电器件领域研究人员对MXene的关注。