Ferromagnetic semiconductors (FMSs) have been extensively investigated to fulfill the prospect of simultaneous control spin and charge of electron over the past decades. However, it is still highly desirable to identify new ferromagnetic semiconductors with robust and reliable sign of coexistence of semi-conductivity and ferromagnetism, especially for those ultrathin film systems with great potential for electrical gating. Here, ultrathin Cr-doped α-MnTe nanosheets can be readily prepared via a facile chemical vapor deposition (CVD) method, which sustain the crystal structure of parent α-MnTe but exhibit utterly changed electrical and magnetic properties. Derived from anomalous Hall measurements, the CVD-grown sample presented a robust out-of-plane ferromagnetic order with Curie temperature of ≈210 K and a large coercivity >3.5 T at 2 K. Additionally, Cr-doped α-MnTe nanosheets show tunable ferromagnetism and different gating effects with varied thicknesses. The theoretical calculation is performed to explain the origin of its ferromagnetism and semi-conductivity, probably attributed to the specific antiferromagnetic arrangement of each Mn/Cr plane and non-zero net magnetic moment with Cr introducing. The work sheds new light on the development of dilute ferromagnetic semiconductors and spintronics.

中文翻译：

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化学气相沉积法制备的半导体 Cr 掺杂 α-MnTe 纳米片的铁磁序

在过去的几十年里，为了实现同时控制电子自旋和电荷的前景，铁磁半导体（FMS）得到了广泛的研究。然而，仍然非常需要识别具有稳健且可靠的半导体和铁磁性共存迹象的新型铁磁半导体，特别是对于那些具有巨大电门控潜力的超薄膜系统。在这里，可以通过简单的化学气相沉积 (CVD) 方法轻松制备超薄 Cr 掺杂的 α-MnTe 纳米片，该方法维持母体 α-MnTe 的晶体结构，但表现出完全改变的电学和磁学性质。源自异常霍尔测量，CVD 生长的样品呈现出稳健的平面外铁磁顺序，居里温度约为 210 K，在 2 K 时具有 > 3.5 T 的大矫顽力。此外，Cr 掺杂的 α-MnTe 纳米片显示出可调节的铁磁性和不同厚度的不同门控效应。进行理论计算以解释其铁磁性和半导电性的起源，可能归因于每个Mn / Cr平面的特定反铁磁排列和引入Cr的非零净磁矩。这项工作为稀铁磁半导体和自旋电子学的发展提供了新的思路。