In this paper, a new design of meminductor emulator has been suggested using voltage differencing buffered amplifier (VDBA), current differencing buffered amplifier (CDBA), a resistor and two grounded capacitors. The key advantages of the proposed meminductor emulator circuits are their design simplicity, implementation without memristors and easily adjustable design for grounded/ floating decremental to incremental configurations. The proposed circuits have been designed and simulated using 180-nm process technologies in the Mentor Graphics Eldo simulation tool. The nonvolatility and Monte Carlo analysis of the proposed meminductor emulators have been given. A comparison table has also been presented to discuss the benefits of the suggested meminductor emulator designs with existing designs. The operation of the designed emulator has been corroborated by using it in the chaotic oscillator and neuromorphic circuit applications.

在本文中，提出了一种使用电压差分缓冲放大器 (VDBA)、电流差分缓冲放大器 (CDBA)、一个电阻器和两个接地电容器的新的记忆电感器仿真器设计。所提出的记忆感应器仿真器电路的主要优点是它们的设计简单、无需忆阻器即可实现以及接地/浮动递减到递增配置的易于调整的设计。建议的电路是使用 Mentor Graphics Eldo 仿真工具中的 180 纳米工艺技术设计和仿真的。已经给出了所提出的记忆感应器仿真器的非易失性和蒙特卡罗分析。还提供了一个比较表，以讨论建议的记忆感应器仿真器设计与现有设计的优势。