In order to achieve reliability improvement in metal–oxidesemiconductor field-effect transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The lightly doped drain (LDD) region in asymmetric MOSFET acts as effective heat sink due to high thermal conductivity of LDD region, and self-heating effect (SHE) is consequently improved. In addition, it has been demonstrated that the proposed asymmetric MOSFET also has advantage of hot-carrier injection (HCI) and on-current variation (ΔI_ON) due to its structure. In order to validate the proposed asymmetric MOSFET, technology computer-aided design (TCAD) simulation is conducted through Synopsys Sentaurus simulation tool. As a result, by utilizing the structure of asymmetric MOSFET, SHE is remarkably improved from 460 K to 392 K, and HCI is reduced by about 50 times, and ΔI_ON is also simultaneously improved.

为了提高金属氧化物半导体场效应晶体管 (MOSFET) 的可靠性，已经提出并研究了非对称 MOSFET。由于 LDD 区域的高导热性，非对称 MOSFET 中的轻掺杂漏极 (LDD) 区域起到了有效的散热作用，从而提高了自热效应 (SHE)。此外，已证明所提出的非对称 MOSFET 还具有热载流子注入 (HCI) 和导通电流变化 (ΔI _ON) 由于其结构。为了验证所提出的非对称 MOSFET，技术计算机辅助设计 (TCAD) 仿真通过 Synopsys Sentaurus 仿真工具进行。结果，利用非对称MOSFET的结构，SHE从460K显着提高到392K，HCI降低了约50倍，同时也提高了ΔI _{ON 。}