Oxygen (O₂) sensing in trace amounts and mixed gas is essential in many types of industries. Semiconductor sensors have proven to be invaluable tools for the O₂ measurements in a wide concentration range, but the sensors are only able to quantify O₂ in a concentration range of subppm, thus far, especially in mixed gas. We present in this paper a new concept for O₂ sensing with incomparable sensitivity using IGZO-films with oxygen vacancy-based conducting filaments (CFs). O₂ sensing relies on rupturing of the CFs, and the proposed device quickly recovers to the initial state using a pulse of 0.6 V/90 μs after the sensing. The proposed device has a high sensitivity of 14 even at an O₂ concentration of 500 ppb, a detection limit of 150 ppb for O₂ at RT, and excellent selectivity for O₂ in mixed gas, which is remarkable compared to other gas sensors. The proposed device can be widely used in gas sensors especially for detecting O₂ at a low ppb level, which is due to excellent sensing characteristics.

中文翻译：

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IGZO 基气敏电阻在室温混合气体环境中观察到的高灵敏度氧传感特性

微量氧气 (O ₂ ) 和混合气体的传感在许多类型的行业中都是必不可少的。半导体传感器已被证明是广泛浓度范围内 O ₂测量的宝贵工具，但迄今为止，传感器只能量化亚 ppm 浓度范围内的O _{2 ，​​尤其是在混合气体中。}我们在本文中提出了一种新的 O ₂传感概念，它使用具有基于氧空位的导电丝 (CF) 的 IGZO 薄膜，具有无与伦比的灵敏度。O ₂感测依赖于 CF 的破裂，所提出的设备在感测后使用 0.6 V/90 μs 的脉冲快速恢复到初始状态。所提出的设备即使在 O _{2下也具有 14 的高灵敏度}500 ppb的浓度，室温下O ₂的检测限为150 ppb ，对混合气体中的O ₂具有出色的选择性，与其他气体传感器相比具有显着的优势。所提出的器件可广泛用于气体传感器，特别是用于检测低 ppb 级的O _{2 ，​​这是由于出色的传感特性。}