Titanium nitride and hafnium oxide stack have been widely used in various resistive memory elements since the materials are complementary-metal-oxide-semiconductor compatible. The understanding of the interface properties between the electrode and the oxide is important in designing the memory behavior. To bridge this understanding, HfO_x grown using plasma enhanced atomic layer deposition (PEALD) and thermal atomic layer deposition (TALD) are compared, in terms of band alignment and electrical performances in the HfO_x/PEALD TiN stacks. X-ray photoelectron spectroscopy reveals a thicker interfacial TiO₂ layer in the PEALD HfO_x/TiN stack whose interface resembles more to the PEALD HfO_x/TiO₂ interface (conduction band offset ΔE_C = 1.63 eV), whereas the TALD HfO_x stack interface resembles more to the TALD HfO_x/TiN interface (ΔE_C = 2.22 eV). The increase in the forming voltage and the early onset of reverse filament formation (RFF) in the I–V measurements for the PEALD HfO_x stack confirms the presence of the thicker interfacial layer; the early onset of RFF is likely related to a smaller ΔE_C. The findings show the importance of understanding the intricate details of the material stack, where ΔE_C difference and the presence of a thicker TiO₂ interfacial layer due to different deposition procedures affect the device performance.

中文翻译：

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沉积条件对异质界面驱动能带排列和电阻转换特性的影响

由于材料与互补金属氧化物半导体兼容，氮化钛和氧化铪叠层已广泛用于各种电阻存储元件。了解电极和氧化物之间的界面特性对于设计存储器行为很重要。为了弥合这种理解，我们比较了使用等离子体增强原子层沉积 (PEALD) 和热原子层沉积 (TALD) 生长的 HfO x 在 HfO x /PEALD TiN 叠层中的能带对准和_电性能。X 射线光电子能谱揭示了PEALD HfO _{x /TiN 叠层中较厚的界面 TiO 2}层，其界面更类似于 PEALD HfO _x /TiO ₂界面（导带偏移 Δ E _C = 1.63 eV），而 TALD HfO _x堆栈界面更类似于 TALD HfO _x /TiN 界面（Δ E _C = 2.22 eV）。_{在 PEALD HfO x}堆栈的I - V测量中，形成电压的增加和反向灯丝形成 (RFF) 的早期开始证实了较厚的界面层的存在；RFF 的早期发作可能与较小的 Δ E _C相关。研究结果表明了解材料堆叠的复杂细节的重要性，其中 ΔEC差异_和较厚的 TiO2 的存在₂界面层因不同的沉积程序影响器件性能。