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Theory of the in-plane photoelectric effect in two-dimensional electron systems
Physical Review B ( IF 3.7 ) Pub Date : 2022-08-15 , DOI: 10.1103/physrevb.106.075411
S. A. Mikhailov, W. Michailow, H. E. Beere, D. A. Ritchie

A new photoelectric phenomenon, the in-plane photoelectric (IPPE) effect, has been recently discovered at terahertz (THz) frequencies in a GaAs/AlxGa1xAs heterostructure with a two-dimensional (2D) electron gas [W. Michailow et al., Sci. Adv. 8, eabi8398 (2022)]. In contrast to the conventional PE phenomena, the IPPE effect is observed at normal incidence of radiation, the height of the in-plane potential step, which electrons overcome after absorption of a THz photon, is electrically tunable by gate voltages, and the effect is maximal at a negative electron “work function,” when the Fermi energy lies above the potential barrier. Based on the discovered phenomenon, efficient detection of THz radiation has been demonstrated. In this work we present a detailed theory of the IPPE effect providing analytical results for the THz wave generated photocurrent, the quantum efficiency, and the internal responsivity of the detector, in dependence on the frequency, the gate voltages, and the geometrical parameters of the detector. The calculations are performed for macroscopically wide samples at zero temperature. Results of the theory are applicable to any semiconductor systems with 2D electron gases, including III-V structures, silicon-based field effect transistors, and the novel 2D layered, graphene-related materials.

中文翻译:

二维电子系统中的面内光电效应理论

最近在太赫兹 (THz) 频率下发现了一种新的光电现象,即面内光电 (IPPE) 效应。作为/X1-X作为具有二维 (2D) 电子气的异质结构 [W. 米查洛等人。,科学。进阶。 8, eabi8398 (2022)]。与传统的 PE 现象相比,IPPE 效应是在辐射的垂直入射时观察到的,电子在吸收 THz 光子后克服的面内电位台阶的高度可以通过栅极电压进行电调谐,并且该效应是当费米能量位于势垒之上时,在负电子“功函数”处最大。基于发现的现象,已经证明了对太赫兹辐射的有效检测。在这项工作中,我们提出了 IPPE 效应的详细理论,为太赫兹波产生的光电流、量子效率和探测器的内部响应度提供了分析结果,具体取决于频率、栅极电压和几何参数。探测器。计算是针对零温度下的宏观宽样品进行的。该理论的结果适用于任何具有二维电子气的半导体系统,包括 III-V 结构、硅基场效应晶体管和新型二维层状石墨烯相关材料。
更新日期:2022-08-15
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