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Insights into Electrochemical Processes of Hollow Octahedral Co3Se4@rGO for High-Rate Sodium Ion Storage
ACS Applied Materials & Interfaces ( IF 9.5 ) Pub Date : 2022-08-12 , DOI: 10.1021/acsami.2c07499
Zheng Huang 1 , Shiyuan Zhou 1 , Peng Dai 1 , Ye Zeng 1 , Ling Huang 1 , Hong-Gang Liao 1 , Shi-Gang Sun 1
Affiliation  

Sodium ion batteries (SIBs), as an alternative and promising energy storage system, have attracted considerable attention due to the abundant reserves and low cost of sodium. However, it remains a great challenge to achieve high capacity and rate capability required for practical applications. Herein, hollow octahedral Co3Se4 particles encapsulated in reduced graphene oxide (Co3Se4@rGO) were designed and synthesized and exhibited excellent electrochemical performances as anodes of SIBs, especially rate capability. Sodiation/desodiation processes and involved mechanisms were investigated by using in situ TEM and in situ XRD. During sodiation, a crystalline Na2Se layer with numerous amorphous fine Co nanoparticles dispersed on it was observed to appear on the surface of the original Co3Se4@rGO particles, and the movable Co–Na2Se composites further migrated to the rGO network with high electron/ion dual conductivity, resulting in ultrafast sodium storage kinetics and remarkable rate performance of the Co3Se4@rGO anode evidenced by delivering a discharge capacity of 229.3 mAh g–1 at a large current density of 50 A g–1. Our findings reveal the fundamental mechanism behind the enhanced performance of the Co3Se4@rGO anode and offer valuable insights into the rational design of electrode materials for high-performance SIBs.

中文翻译:

空心八面体 Co3Se4@rGO 用于高倍率钠离子存储的电化学过程研究

钠离子电池(SIBs)作为一种可替代且有前景的储能系统,由于钠的储量丰富且成本低廉而引起了人们的广泛关注。然而,实现实际应用所需的高容量和倍率能力仍然是一个巨大的挑战。在此,设计和合成了包裹在还原氧化石墨烯(Co 3 Se 4 @rGO)中的中空八面体Co 3 Se 4颗粒,并作为SIBs的负极表现出优异的电化学性能,尤其是倍率性能。使用原位TEM 和原位XRD研究了钠化/脱钠过程和相关机制。在钠化过程中,结晶 Na 2在原来的Co 3 Se 4 @rGO 粒子的表面上出现了分散有大量无定形细Co纳米粒子的Se层,可移动的Co-Na 2 Se复合材料进一步迁移到具有高电子/离子对偶的rGO网络中。 Co 3 Se 4 @rGO 阳极具有超快的钠储存动力学和卓越的倍率性能,这在 50 A g -1的大电流密度下提供 229.3 mAh g -1的放电容量证明了这一点。我们的研究结果揭示了 Co 3 Se 4性能增强背后的基本机制@rGO 阳极,并为高性能 SIB 电极材料的合理设计提供有价值的见解。
更新日期:2022-08-12
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