The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time of a ZrO₂(Y)-based memristive device when switching from a low resistance state to a high resistance state have been experimentally investigated. A nonmonotonic dependence of the resistive state relaxation time on the external noise intensity is found. This behavior is interpreted as a manifestation of the noise-enhanced stability effect previously observed in various complex systems with metastable states. It is shown that the experimental results agree satisfactorily with the theoretical ones. The presented results indicate the constructive role of external noise and its possible use as a mechanism for controlling the kinetics of resistive switching.

实验研究了外部数字合成高斯噪声对ZrO ₂ (Y) 基忆阻器件从低阻态切换到高阻态时的阻态弛豫时间的影响。发现了电阻态弛豫时间对外部噪声强度的非单调依赖性。这种行为被解释为先前在具有亚稳态的各种复杂系统中观察到的噪声增强稳定性效应的表现。结果表明，实验结果与理论结果吻合较好。所呈现的结果表明外部噪声的建设性作用及其可能用作控制电阻切换动力学的机制。