Integrating high fill factor (FF) with above-bandgap photovoltage has been of fundamental importance in building high-power conversion efficiency (PCE) devices based on anomalous photovoltaic effect. Herein, the discovery of high performance anomalous photovoltaic effect under white light in designed Zn_1–2x(Fe_xLi_x)O films fabricated by a low-cost sol-gel process is reported, where above-bandgap photovoltage, improved FF, a switchable photoresponse of 34.1 mA/W, and a PCE of 10.3 % are obtained. It is found that the photovoltaic effects are closely related to the ferroelectricity of the co-doped films. A mechanism based on serial connection of poled ferroelectric regions and junctions is proposed to interpret the photovoltaic effects with high FF in Fe³⁺-Li⁺ co-doped ZnO films, where the junction is formed between the ferroelectric and weak-ferroelectric regions. This photo-to-electron conversion model suggests a route to design and fabricate cost-efficient solar cell and other optoelectronic devices.

将高填充因子 (FF) 与高于带隙的光电压相结合，对于构建基于反常光伏效应的高功率转换效率 (PCE) 器件至关重要。在此，在设计的 Zn _{1-2 x} (Fe _x Li _x)O 薄膜通过低成本的溶胶-凝胶工艺制造，获得了高于带隙的光电压、改进的 FF、34.1 mA/W 的可切换光响应和 10.3% 的 PCE。发现光伏效应与共掺杂薄膜的铁电性密切相关。提出了一种基于极化铁电区和结串联的机制来解释Fe ³⁺ -Li ⁺共掺杂ZnO薄膜中具有高FF的光伏效应，其中结形成在铁电区和弱铁电区之间。这种光电子转换模型为设计和制造具有成本效益的太阳能电池和其他光电器件提供了一条途径。