Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon (Si) and other technology-essential semiconductors. Concentrating on circumventing the optical limits on the deliverable energy density at interfaces between narrow-gap materials with intense infrared light, the first feasibility demonstration of transmission laser welding between Si workpieces using nanosecond laser pulses is made. A shear joining strength of 32 ± 10 MPa which compares very favorably to the complex process alternatives is obtained. Supported by experiments repeated on different material combinations including gallium arsenide, it is confirmed that this remarkable performance level is achievable for similar and dissimilar semiconductors. The demonstrations rely on a small footprint fiber laser, an aspect that holds great promises for the advent of a high-efficiency flexible process beneficial for important technology developments including lab-on-a-chip and hybrid semiconductor systems.

中文翻译：

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相似和不同半导体材料的透射激光焊接

激光微焊接是当今应用于各个领域的先进制造方法。然而，到目前为止，重要的物理限制阻碍了证明其在硅 (Si) 和其他技术关键半导体中的适用性。专注于利用强红外光规避窄带材料之间界面处可传递能量密度的光学限制，首次使用纳秒激光脉冲在硅工件之间进行透射激光焊接的可行性论证。获得了 32 ± 10 MPa 的剪切连接强度，与复杂的工艺替代方案相比非常有利。在对不同材料组合（包括砷化镓）进行重复实验的支持下，证实类似和不同的半导体都可以实现这种卓越的性能水平。