In part I of this series article, it was found that a negative charge process after a partial breakdown (PB) could reduce the breakdown voltage of vacuum gaps in series. This part proposes the use of a bridging resistor to mitigate this negative charge process and improve the breakdown voltage of the entire arrangement. Two commercial vacuum interrupters (VIs) of the same model were connected in series, with each VI having a grading capacitor connected in parallel. A bridging resistor was then bridged between two floating potential middle points: at the middle point between the VIs and at the middle point between the grading capacitors. Experiments were performed using various gap distance arrangements and resistance values. A noncontact measurement method using an electric field sensor was proposed to measure the floating potentials of the two VIs. Experimental results showed that the negative charge process could be mitigated using the bridging resistor $R_{g}$ by blocking the discharge current from the grading capacitor into the broken-down VI. The voltage distribution between the two VIs became uneven because of the bridging resistor, but the breakdown voltage of the series-connected gaps increased significantly, regardless of the resistance value. The increase rate was influenced by the gap distance arrangement. With a symmetrical gap distance arrangement for the two VIs, a maximum increase rate of 37.4% was reached when $R_{g} =40\,\,\text{k}\Omega $ . With asymmetrical arrangements, when smaller gaps shared higher voltages, the increase rate reached a maximum of 52.8% with $R_{g} =70\,\,\text{k}\Omega $ , but it only reached a maximum of 38.9% when larger gaps shared higher voltages with $R_{g} =10\,\,\text{k}\Omega $ .

中文翻译：

---

串联真空间隙的闪电脉冲击穿——第二部分：桥接电阻器

在本系列文章的第一部分中，发现部分击穿 (PB) 后的负电荷过程可以降低串联真空间隙的击穿电压。这部分提出使用桥接电阻来减轻这种负电荷过程并提高整个布置的击穿电压。两个相同型号的商用真空灭弧室 (VI) 串联，每个 VI 有一个并联的分级电容器。然后在两个浮动电位中间点之间桥接一个桥接电阻：VI 之间的中间点和分级电容器之间的中间点。使用各种间隙距离排列和电阻值进行实验。提出了一种使用电场传感器的非接触式测量方法来测量两个 VI 的浮动电位。实验结果表明，使用桥接电阻可以减轻负电荷过程 $R_{g}$通过阻断从分级电容器到被击穿的 VI 的放电电流。由于桥接电阻，两个VI之间的电压分布变得不均匀，但串联间隙的击穿电压显着增加，与电阻值无关。增长率受间隙距离排列的影响。在两个 VI 的间隙距离对称排列的情况下，最大增加率达到 37.4% $R_{g} =40\,\,\text{k}\Omega $. 不对称排列时，当较小的间隙共享较高的电压时，增加率达到最大值 52.8% $R_{g} =70\,\,\text{k}\Omega $，但当较大的间隙与 $R_{g} =10\,\,\text{k}\Omega $.