Despite being a requisite for modern transparent electronics, few metals have a sufficiently high infrared transmittance due to the free electron response. Here, upon alloying the correlated metal SrVO₃ with BaVO₃, the medium wavelength infrared transmittance at a wavelength of 4 μm is found to be 50% higher than those for Sn-doped In₂O₃ (ITO) and La-doped BaSnO₃ (BLSO). The room temperature resistivity of the alloy of ∼100 μΩ cm is 1 order of magnitude lower than those of ITO and BLSO, guaranteeing a profound electromagnetic shielding effectiveness of 22–31 dB at 10 GHz in the X-band. Systematic investigations reveal symmetry breaking of VO₆ oxygen octahedra in SrVO₃ due to the substitution of Sr²⁺ with larger Ba²⁺ ions, localization of electrons in the lower energy V-d_yz and d_zx orbitals, and stronger correlation effects. The lattice-orbital-charge-coupled engineering of the electronic band structure in correlated metals offers a new design strategy to create super-broad-band transparent conductors with an enhanced shielding capability.

中文翻译：

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通过晶格轨道电荷耦合的红外透明和电磁屏蔽相关金属

尽管是现代透明电子产品的必需品，但由于自由电子响应，很少有金属具有足够高的红外透射率。在此，将相关金属 SrVO ₃与 BaVO ₃合金化后，发现在 4 μm 波长处的中波长红外透射率比 Sn 掺杂的 In ₂ O ₃ (ITO) 和 La 掺杂的 BaSnO ₃高 50%。 （BLSO）。该合金的室温电阻率约为 100 μΩ cm，比 ITO 和 BLSO 低 1 个数量级，保证了 X 波段 10 GHz 时 22-31 dB 的深度电磁屏蔽效果。系统研究揭示了 SrVO _{3中 VO 6氧八面体的对称性破坏}由于 Sr ²⁺被较大的 Ba ²⁺离子取代，电子在较低能量的 V- d _yz和d _zx轨道中的局部化，以及更强的相关效应。相关金属中电子能带结构的晶格轨道电荷耦合工程为创造具有增强屏蔽能力的超宽带透明导体提供了一种新的设计策略。