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Chemical Vapor Deposition of Uniform and Large-Domain Molybdenum Disulfide Crystals on Glass/Al2O3 Substrates
Nanomaterials ( IF 5.3 ) Pub Date : 2022-08-07 , DOI: 10.3390/nano12152719
Qingguo Gao 1 , Jie Lu 2 , Simin Chen 1 , Lvcheng Chen 1 , Zhequan Xu 1 , Dexi Lin 1 , Songyi Xu 1 , Ping Liu 1 , Xueao Zhang 2 , Weiwei Cai 2 , Chongfu Zhang 1, 3
Affiliation  

Two-dimensional molybdenum disulfide (MoS2) has attracted significant attention for next-generation electronics, flexible devices, and optical applications. Chemical vapor deposition is the most promising route for the production of large-scale, high-quality MoS2 films. Recently, the chemical vapor deposition of MoS2 films on soda-lime glass has attracted great attention due to its low cost, fast growth, and large domain size. Typically, a piece of Mo foil or graphite needs to be used as a buffer layer between the glass substrates and the CVD system to prevent the glass substrates from being fragmented. In this study, a novel method was developed for synthesizing MoS2 on glass substrates. Inert Al2O3 was used as the buffer layer and high-quality, uniform, triangular monolayer MoS2 crystals with domain sizes larger than 400 μm were obtained. To demonstrate the advantages of glass/Al2O3 substrates, a direct comparison of CVD MoS2 on glass/Mo and glass/Al2O3 substrates was performed. When Mo foil was used as the buffer layer, serried small bilayer islands and bright core centers could be observed on the MoS2 domains at the center and edges of glass substrates. As a control, uniform MoS2 crystals were obtained when Al2O3 was used as the buffer layer, both at the center and the edge of glass substrates. Raman and PL spectra were further characterized to show the merit of glass/Al2O3 substrates. In addition, the thickness of MoS2 domains was confirmed by an atomic force microscope and the uniformity of MoS2 domains was verified by Raman mapping. This work provides a novel method for CVD MoS2 growth on soda-lime glass and is helpful in realizing commercial applications of MoS2.

中文翻译:

玻璃/Al2O3 基板上均匀大域二硫化钼晶体的化学气相沉积

二维二硫化钼(MoS 2)在下一代电子产品、柔性器件和光学应用中引起了极大的关注。化学气相沉积是生产大规模、高质量MoS 2薄膜的最有希望的途径。近年来,在钠钙玻璃上化学气相沉积MoS 2薄膜由于其成本低、生长快、畴尺寸大而引起了人们的广泛关注。通常,需要使用一块钼箔或石墨作为玻璃基板和 CVD 系统之间的缓冲层,以防止玻璃基板碎裂。在这项研究中,开发了一种在玻璃基板上合成 MoS 2的新方法。惰性Al 2 O以3作为缓冲层,获得了畴尺寸大于400μm的高质量、均匀的三角形单层MoS 2晶体。为了证明玻璃/Al 2 O 3 基板的优势,玻璃/Mo 和玻璃/Al 2 O 3基板上CVD MoS 2 进行了直接比较。当Mo箔用作缓冲层时,在玻璃基板中心和边缘的MoS 2畴上可以观察到串联的小双层岛和明亮的核心中心。作为对照,Al 2 O 3被用作缓冲层,在玻璃基板的中心和边缘。进一步表征拉曼和PL光谱以显示玻璃/Al 2 O 3基板的优点。此外,通过原子力显微镜确认了MoS 2畴的厚度,并通过拉曼映射验证了MoS 2畴的均匀性。该工作为钠钙玻璃上CVD MoS 2的生长提供了一种新的方法,有助于实现MoS 2的商业应用。
更新日期:2022-08-07
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