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Magnetoresistance of Co2FeAl Films on the A-Plane of Sapphire
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2022-08-03 , DOI: 10.1134/s1027451022040048
L. A. Fomin , I. V. Malikov , V. A. Berezin

Abstract

Co2FeAl (CFA) films with uniaxial magnetic anisotropy are obtained in ultrahigh vacuum using pulsed-laser evaporation on the A-plane of sapphire with a 10-nm seed layer of tungsten (110) epitaxially grown at a temperature of 450°C. The orientation of the crystallographic axes in the grown films is the same as for the growth of Fe (110) films on the same substrate. For some films, an inverse dependence of the anisotropic magnetoresistance is found, which may indicate implementation of the half-metal state. For other films from the same series, the inverse dependence is not observed since random factors, such as distortions of the lattice parameters, stresses in it, and various structural defects, can lead to loss of the half-metal properties.



中文翻译:

蓝宝石 A 面 Co2FeAl 薄膜的磁阻

摘要

具有单轴磁各向异性的Co 2 FeAl (CFA) 薄膜是在超高真空中使用脉冲激光蒸发在蓝宝石的 A 平面上获得的,其中 10 nm 的钨 (110) 种子层在 450°C 的温度下外延生长。生长薄膜中的晶轴取向与在同一衬底上生长 Fe (110) 薄膜的方向相同。对于某些薄膜,发现了各向异性磁阻的反相关性,这可能表明实现了半金属态。对于同系列的其他薄膜,没有观察到反向依赖性,因为随机因素,例如晶格参数的扭曲、其中的应力和各种结构缺陷,可能导致半金属性能的损失。

更新日期:2022-08-04
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