Abstract

One of the ways to use a focused ion beam in lithographic processes to create nanostructures is through the exposure of special sensitive materials, i.e., resists. As a result of exposure, the solubility of such a material increases (“positive” resist) or, conversely, decreases (“negative” resist). Subsequent selective irradiation and development of the resist make it possible to create a predetermined pattern on the substrate. This work is aimed at developing the theoretical foundations for this ion lithography method. A practically important case of stopping heavy ions in an organic resist, the average atomic mass of which is much less than the mass of the incident ion, is considered. Expressions for the “energy” and transport lengths of ions are obtained. The calculations are carried out assuming a power-law interaction potential. The “energy” length characterizes the depth of penetration of ions into the material, and the transport length is related to beam expansion due to scattering. Therefore, these lengths are the main characteristics of the zone in which the ion-beam energy is absorbed.

中文翻译：

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用于描述离子束光刻中抗蚀剂改性体积的能量和传输长度

摘要

在光刻工艺中使用聚焦离子束来产生纳米结构的方法之一是通过特殊敏感材料（即抗蚀剂）的曝光。作为曝光的结果，这种材料的溶解度增加（“正”抗蚀剂）或相反地降低（“负”抗蚀剂）。随后对抗蚀剂进行选择性照射和显影，可以在基板上形成预定图案。这项工作旨在为这种离子光刻方法奠定理论基础。考虑在有机抗蚀剂中阻止重离子的实际重要情况，其平均原子质量远小于入射离子的质量。获得了离子的“能量”和传输长度的表达式。假设幂律相互作用势进行计算。“能量”长度表征离子进入材料的深度，传输长度与散射引起的光束扩展有关。因此，这些长度是吸收离子束能量的区域的主要特征。