We have constructed NiO/ZnO thin film heterojunction diodes by dc magnetron sputtering technique and evaluated their performance for ultraviolet sensor applications. The constructed device configuration, ITO/ZnO/NiO/Ag exhibited excellent current-voltage rectifying characteristics in the order of 10⁵ at room temperature. The effect of rapid thermal annealing treatment on the fabricated ITO/ZnO/NiO thin film stack was evaluated for their photodetector characteristics. The structural, optical, and spectroscopic properties were also investigated. Further, the ITO/ZnO/NiO/Ag diodes were tested under 365 nm UV light illumination having a power density of 0.06 mW/cm². Remarkably, a speed of response with rise/fall time of 197.29/537.10 ms has been recorded at self-powered mode. Interestingly, the photodiode device has exhibited a spectral responsivity of 13.01 mA/W and stable photo detectivity of 5.66 × 10¹¹ Jones at room temperature. The n-ZnO/p-NiO heterojunction photodetector has shown its ability to detect a faint UV light in a self-powered mode.

我们通过直流磁控溅射技术构建了 NiO/ZnO 薄膜异质结二极管，并评估了它们在紫外传感器应用中的性能。所构建的器件结构ITO/ZnO/NiO/Ag在室温下表现出10 ⁵量级的优异电流-电压整流特性。评估了快速热退火处理对制造的 ITO/ZnO/NiO 薄膜叠层的影响，以评估其光电探测器特性。还研究了结构、光学和光谱特性。^{此外，在功率密度为 0.06 mW/cm 2}的 365 nm 紫外光照射下测试了 ITO/ZnO/NiO/Ag 二极管. 值得注意的是，在自供电模式下记录了上升/下降时间为 197.29/537.10 ms 的响应速度。有趣的是，该光电二极管器件在室温下表现出 13.01 mA/W 的光谱响应度和 5.66 × 10 ¹¹ Jones 的稳定光电探测率。n-ZnO/p-NiO异质结光电探测器已显示出在自供电模式下探测微弱紫外光的能力。