Construction of heterojunction has been considered as an efficient strategy to enhance the gas-sensing performances of metal oxide semiconductors. On this basis, hierarchical In₂O₃/In₂S₃ microsphere heterostructures were synthesized by partial oxidation of In₂S₃ precursors which were obtained via a facile hydrothermal method. Besides, gas sensors based on the acquired materials were fabricated to investigate their sensing performances toward triethylamine (TEA). The results reveal that the gas sensor based on In₂O₃/In₂S₃ exhibits a high response of 37 at 300 °C toward 0.45 mg/L TEA, which is 3.7 times higher than that of bare In₂O₃. Meanwhile, it also possesses fast response/recovery time (19 s/154 s), good repeatability, selectivity and long-term stability. The excellent sensing performances toward TEA are mainly attributed to the massive oxygen vacancy defects and heterojunction formed between In₂O₃ and In₂S₃. This work provides a facile temperature-dependent route to controllably synthesize hierarchical In₂O₃/In₂S₃ microsphere heterostructures, and the In₂O₃/In₂S₃ sensor shows great application prospects in TEA detection.

异质结的构建被认为是提高金属氧化物半导体气敏性能的有效策略。在此基础上，通过简便的水热法获得的In ₂ S ₃前驱体的部分氧化，合成了分级In ₂ O ₃ /In ₂ S ₃微球异质结构。此外，基于获得的材料制造了气体传感器，以研究它们对三乙胺（TEA）的传感性能。结果表明，基于In ₂ O ₃ /In ₂ S _{3的气体传感器在 300 °C 下对 0.45 mg/L TEA 表现出 37 的高响应，是裸 In 2} O ₃的 3.7 倍。同时，它还具有快速的响应/恢复时间（19 s/154 s）、良好的重复性、选择性和长期稳定性。TEA优异的传感性能主要归功于大量的氧空位缺陷和In ₂ O ₃和In ₂ S ₃之间形成的异质结。这项工作为可控合成分级 In ₂ O ₃ /In ₂ S ₃微球异质结构和 In ₂ O₃ /In ₂ S ₃传感器在TEA检测中显示出巨大的应用前景。