Measurement of radiation dose has the utmost importance in the field of medicine and research. This work aims the estimation of the sensitivity of Indium oxide thin film for dosimetry application. Indium oxide thin film prepared using spray pyrolysis on a glass substrate with an optimized concentration of 0.1 M and temperature of 450 ⁰C was exposed to different gamma radiation doses using Co- 60 as the radiation source. The impact of irradiation on the structural properties of the film was investigated by XRD and a higher crystallite size was obtained for a dose of 200 Gy. The phase purity and vibrational modes of the irradiated films were investigated using Raman spectra. The optical characterization of the irradiated film shows negligible variation in bandgap with irradiation. The optical parameters like refractive index and extinction coefficient are also extracted from optical data. The reduction in the intensity of PL peaks after irradiation was attributed to the annihilation of gamma-induced defect levels. The thermoluminescence curve indicates the suitability of In₂O₃ as dosimeters. XPS analysis also supports the annihilation of defects at 200 Gy. The electrical measurement was used to find the sensitivity of the film at different applied voltages and it lies in the range of 101 − 380 mA/cm²/Gy. The fact that irradiated material undergoes a change in physical properties due to the influence of gamma-ray can be utilized for gamma dosimetry applications. The changes induced by gamma-ray in structural, optical and electrical properties have been investigated in detail.

辐射剂量的测量在医学和研究领域具有极其重要的意义。这项工作旨在估计氧化铟薄膜在剂量测定应用中的灵敏度。在玻璃基板上使用喷雾热解制备的氧化铟薄膜，优化浓度为 0.1 M，温度为 450 ⁰使用 Co-60 作为辐射源，C 暴露于不同的伽马辐射剂量。通过 XRD 研究了辐照对薄膜结构性能的影响，并在 200 Gy 的剂量下获得了更高的微晶尺寸。使用拉曼光谱研究了辐照薄膜的相纯度和振动模式。辐照薄膜的光学特性表明带隙随辐照的变化可以忽略不计。还从光学数据中提取光学参数，如折射率和消光系数。辐照后PL峰强度的降低归因于伽马诱导的缺陷水平的消失。热释光曲线表明In ₂ O _{3的适用性}作为剂量计。XPS 分析还支持在 200 Gy 下消除缺陷。电测量用于确定薄膜在不同施加电压下的灵敏度，它位于 101 - 380 mA/cm ² /Gy 的范围内。辐照材料由于伽马射线的影响而发生物理性质变化的事实可用于伽马剂量测定应用。已经详细研究了伽马射线引起的结构、光学和电学性质的变化。