Polarization-sensitive photodetectors based on van der Waals heterojunctions (vdWH) have excellent polarization-resolved optoelectronic properties that can enable the applications in polarized light identification and imaging. With the development of optical microcomputer control systems (OMCS), it is crucial and energy efficient to adopt the self-powered and polarization-resolved signal-generators to optimize the circuit design of OMCS. In this work, the selenium (Se) flakes with in-plane anisotropy and p-type character are grown and incorporated with n-type tungsten disulfide (WS₂) to construct the type-II vdWH for polarization-sensitive and self-powered photodetectors. Under 405 nm monochrome laser with 1.33 mW cm⁻² power density, the photovoltaic device exhibits superior photodetection performance with the photoelectric conversion efficiency (PCE) of 3.6%, the responsivity (R) of 196 mA W⁻¹ and the external quantum efficiency (EQE) of about 60%. The strong in-plane anisotropy of Se crystal structure gives rise to the capability of polarized light detection with anisotropic photocurrent ratio of ≈2.2 under the 405 nm laser (13.71 mW cm⁻²). Benefiting from the well polarization-sensitive and photovoltaic properties, the p-Se/n-WS₂ vdWH is successfully applied in the OMCS as multivalued signal trigger. This work develops the new anisotropic vdWH and demonstrates its feasibility for applications in logic circuits and control systems.

中文翻译：

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偏振分辨p-Se/n-WS2异质结在微机系统中作为多值信号触发器的应用

基于范德华异质结 (vdWH) 的偏振敏感光电探测器具有出色的偏振分辨光电特性，可应用于偏振光识别和成像。随着光学微机控制系统（OMCS）的发展，采用自供电和偏振分辨的信号发生器来优化OMCS的电路设计是至关重要和节能的。在这项工作中，具有面内各向异性和 p 型特征的硒 (Se) 薄片被生长并与 n 型二硫化钨 (WS ₂ ) 结合，以构建用于偏振敏感和自供电光电探测器的 II 型 vdWH . 1.33 mW cm ^{-2的 405 nm 下单色激光器}功率密度，光伏器件表现出优异的光电探测性能，光电转换效率（PCE）为3.6%，响应度（R）为196 mA W ^-1，外量子效率（EQE）约为60%。^{Se晶体结构的强面内各向异性导致在405 nm激光（13.71 mW cm -2}）下具有≈2.2的各向异性光电流比的偏振光检测能力。得益于良好的偏振敏感和光伏特性，p-Se/n-WS ₂ vdWH 作为多值信号触发器成功应用于OMCS。这项工作开发了新的各向异性 vdWH，并证明了其在逻辑电路和控制系统中应用的可行性。