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Wireless Multiferroic Memristor with Coupled Giant Impedance and Artificial Synapse Application
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2022-07-26 , DOI: 10.1002/aelm.202200370
Yao Wang 1 , Rui Xiao 1 , Ning Xiao 1 , Zhongfeng Wang 2 , Lei Chen 3 , Yumei Wen 1 , Ping Li 1
Affiliation  

Internet of things (IoT) becomes part of everyday life across the globe, whose nodes are able to sense, store, and transmit information wirelessly. However, the IoT nodes based on von Neumann architectures realize the memory, computing and communication functions with physical separated devices, which result in severe power consumption and computation latency. In this study, a wireless multiferroic memristor consisting of Metglas/Pb(Zr0.3Ti0.7)O3-1 mol% Mn/Metglas laminate is proposed, which integrates the storage, processing, and wireless communication of information in a single device at the first time. First, a power efficient impedance modulation mechanism is explored for the multiferroic memristor, which couples electric field modulated giant magnetoimpedance (GMI) of magnetostrictive Metglas with varied impedance of ferroelectric Pb(Zr0.3Ti0.7)O3-1 mol% Mn due to the gradual polarization switching. Meanwhile a pair of multiferroic memristors are used to transmit and receive stored information wirelessly, which facilitate the application of memristor in the IoT. Furthermore, the experimental study demonstrates that the memristor can mimic the synaptic plasticity, such as long-term potentiation, depression, and spiking-timing-dependent plasticity, and it also reveals the capability of pattern learning with a memristor network. This work paves a way toward the IoT nodes integrating both brain inspired computing and wireless communication functions.

中文翻译:

具有耦合巨阻抗和人工突触应用的无线多铁忆阻器

物联网 (IoT) 已成为全球日常生活的一部分,其节点能够以无线方式感知、存储和传输信息。然而,基于冯诺依曼架构的物联网节点通过物理分离的设备实现存储、计算和通信功能,导致严重的功耗和计算延迟。在这项研究中,无线多铁性忆阻器由 Metglas/Pb(Zr 0.3 Ti 0.7 )O 3组成提出-1 mol% Mn/Metglas层压板,首次将信息的存储、处理和无线通信集成在单个设备中。首先,探索了一种用于多铁忆阻器的功率高效阻抗调制机制,该机制将磁致伸缩金属玻璃的电场调制巨磁阻抗(GMI)与铁电Pb(Zr 0.3 Ti 0.7)O 3的变化阻抗相耦合。-1 mol% Mn,由于逐渐极化切换。同时采用一对多铁性忆阻器无线传输和接收存储的信息,方便忆阻器在物联网中的应用。此外,实验研究表明,忆阻器可以模拟突触可塑性,如长时程增强、抑制和尖峰定时依赖的可塑性,还揭示了忆阻器网络的模式学习能力。这项工作为集成大脑启发计算和无线通信功能的物联网节点铺平了道路。
更新日期:2022-07-26
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