In this work, third-harmonic generation (THG) of GaAs/Ga${}_{1-x}$Al${}_x$As spherical quantum dots (QDs) affected by Deng–Fan–Eckart (DFE) potential are carefully analyzed for different applied tuning parameters (pressure, temperature and Al-concentration). The eigensolutions of the radial Schrödinger equation are obtained using Factorization method within the effective mass approximation. The results show that the energies and dipole matrix elements are strongly dependent on DFE potential parameters and applied tuning factors. Moreover, we find that these parameters have a significant effect on the position and magnitude of resonant peak of THG coefficient.

在这项工作中，GaAs/Ga 的三次谐波产生 (THG)${}_{1-X}$铝${}_X$仔细分析受 Deng-Fan-Eckart (DFE) 电位影响的球形量子点 (QD) 以了解不同的应用调谐参数（压力、温度和 Al 浓度）。径向薛定谔方程的特征解是在有效质量近似内使用因式分解方法获得的。结果表明，能量和偶极矩阵元素强烈依赖于 DFE 电位参数和应用的调谐因子。此外，我们发现这些参数对THG系数谐振峰的位置和幅度有显着影响。