In this paper, two types of avalanche photodiode (APD) are compared, namely, a P-down APD using an inverted structure and a P-up APD using a conventional structure. Comparison between those two types of APD was made and differences between them were pointed out. We find that the inverted APD structure can prevent undesirable edge breakdown and improve high-speed performance. A maximum 3-dB bandwidth of 23 GHz and a gain–bandwidth product of 276 GHz are obtained for the P-down APD. For larger capacity applications, the P-down APD can play a greater role than the P-up APD.

中文翻译：

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用于大容量应用的倒置和传统雪崩光电二极管的性能比较

在本文中，比较了两种类型的雪崩光电二极管（APD），即使用倒置结构的 P-down APD 和使用传统结构的 P-up APD。对这两种类型的APD进行了比较，并指出了它们之间的差异。我们发现倒置 APD 结构可以防止不良边缘击穿并提高高速性能。P-down APD 的最大 3-dB 带宽为 23 GHz，增益带宽积为 276 GHz。对于更大容量的应用，P-down APD 可以比 P-up APD 发挥更大的作用。