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An improved source follower per detector ROIC for HgCdTe infrared photodiodes
Microsystem Technologies ( IF 2.1 ) Pub Date : 2022-07-22 , DOI: 10.1007/s00542-022-05342-4
Manik Dangi, Raghvendra Sahai Saxena, Vandana Niranjan

A new readout circuit for HgCdTe based Infrared photodiodes has been proposed. In this work, the conventional source follower per detector (SFD) architecture of the readout integrated circuit (ROIC) has been suitably modified to improve the performance. The SFD unit cell has a shortcoming of unstable detector bias voltage that makes it non-linear and affects the injection efficiency. In this paper, to overcome the shortcoming of conventional SFD, a high output impedance cascode amplifier has been introduced between the detector and the input transistor of the conventional SFD circuit, which boosts the efficiency of the conventional circuit. The proposed topology improves intrinsic gain by providing high output resistance that boosts the injection of charge carriers from the detector to the interface circuit. The use of cascode structure in the source follower also improves the noise performance and intrinsic gain of the interface circuit resulting in the enhancement of its overall performance. Using the simulation-based analysis performed on LTSPICE circuit simulator for 180 nm standard CMOS process technology, it has been shown that the proposed circuit results in the injection efficiency > 99% even with the detector of low dynamic resistance of ~ 2 MΩ and therefore it is suitable for the complete range of SWIR to VLWIR HgCdTe infrared photodiodes.



中文翻译:

用于 HgCdTe 红外光电二极管的每个检测器 ROIC 的改进源跟随器

已经提出了一种用于基于 HgCdTe 的红外光电二极管的新读出电路。在这项工作中,读出集成电路 (ROIC) 的传统的每检测器源跟随器 (SFD) 架构已被适当地修改以提高性能。SFD晶胞存在检测器偏置电压不稳定的缺点,使其非线性,影响注入效率。在本文中,为了克服传统SFD的缺点,在传统SFD电路的检波器和输入晶体管之间引入了一个高输出阻抗级联放大器,提高了传统电路的效率。所提出的拓扑结构通过提供高输出电阻来提高固有增益,从而提高电荷载流子从检测器到接口电路的注入。源极跟随器中级联结构的使用也提高了接口电路的噪声性能和固有增益,从而提高了其整体性能。使用在 LTSPICE 电路模拟器上针对 180 nm 标准 CMOS 工艺技术执行的基于模拟的分析,结果表明,即使使用 ~ 2 MΩ 的低动态电阻检测器,所提出的电路的注入效率也 > 99%,因此它适用于全系列 SWIR 到 VLWIR HgCdTe 红外光电二极管。

更新日期:2022-07-23
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