Semiconductors with high thermal conductivity and electron-hole mobility are of great importance for electronic and photonic devices as well as for fundamental studies. Among the ultrahigh–thermal conductivity materials, cubic boron arsenide (c-BAs) is predicted to exhibit simultaneously high electron and hole mobilities of >1000 centimeters squared per volt per second. Using the optical transient grating technique, we experimentally measured thermal conductivity of 1200 watts per meter per kelvin and ambipolar mobility of 1600 centimeters squared per volt per second at the same locations on c-BAs samples at room temperature despite spatial variations. Ab initio calculations show that lowering ionized and neutral impurity concentrations is key to achieving high mobility and high thermal conductivity, respectively. The high ambipolar mobilities combined with the ultrahigh thermal conductivity make c-BAs a promising candidate for next-generation electronics.

中文翻译：

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立方砷化硼中的高双极迁移率

具有高导热性和电子空穴迁移率的半导体对于电子和光子器件以及基础研究非常重要。在超高热导率材料中，立方砷化硼 (c-BAs) 预计会同时表现出 >1000 平方厘米每伏特每秒的高电子和空穴迁移率。使用光学瞬态光栅技术，我们在室温下在 c-BA 样品的相同位置实验测量了每开尔文每米 1200 瓦的热导率和每秒 1600 平方厘米的双极迁移率，尽管存在空间变化。从头算计算表明，降低电离和中性杂质浓度分别是实现高迁移率和高热导率的关键。