In this study, PdSe₂ n- and p-metal-oxide semiconductor field-effect transistors (MOSFETs) are realized using the same conventional metal contact without any doping processes through utilizing the thickness-dependent phase transition in PdSe₂. PdSe₂ is semiconducting with a sizable band gap in a few layers while semimetallic in bulk. With the thin semiconducting PdSe₂ for the channel and the conventional metal source/drain, an n-type behavior is achieved, whereas a p-type behavior with the thin PdSe₂ channel and the thick semimetallic PdSe₂ source/drain. To understand the carrier injection at the interface between the thin PdSe₂ channel and the thick PdSe₂ source/drain, a rigorous analysis of the band alignment and the temperature-dependent transfer characteristics is presented to extract the Schottky barrier height at the interface. Additionally, interconnecting PdSe₂ n- and p-MOSFETs successfully demonstrate complementary metal-oxide semiconductor (CMOS) inverter with clear voltage transfer characteristics. The proposed approach to control the polarity of PdSe₂ MOSFETs using the unique thickness-dependent phase transition in PdSe₂ is promising for realizing the CMOS logic circuit with the same channel material and single contact metal.

中文翻译：

---

通过与厚度相关的相变，在 PdSe2 n-/p-MOSFET 中使用相同金属触点的 PdSe2 CMOS 演示

在这项研究中，通过利用 PdSe 2 中与厚度相关的相变，使用相同的传统金属接触实现了 PdSe _{2 n}和 p 金属氧化物半导体场效应晶体管 (MOSFET)，而无需任何掺杂工艺。PdSe ₂是半导电的，在几层中具有相当大的带隙，而在体积上是半金属的。使用薄的半导体 PdSe ₂用于沟道和传统的金属源/漏，实现了 n 型行为，而使用薄 PdSe ₂沟道和厚的半金属 PdSe ₂源/漏实现了 p 型行为。了解薄 PdSe ₂通道和厚 PdSe之间界面处的载流子注入₂源极/漏极，对能带对齐和与温度相关的传输特性进行了严格分析，以提取界面处的肖特基势垒高度。此外，互连的 PdSe ₂ n 和 p MOSFET 成功地展示了具有清晰电压传输特性的互补金属氧化物半导体 (CMOS) 逆变器。_{所提出的使用 PdSe 2}中与厚度相关的独特相变来控制 PdSe ₂ MOSFET极性的方法有望用于实现具有相同沟道材料和单一接触金属的 CMOS 逻辑电路。