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Inverter and Ternary Content-Addressable Memory Based on Carbon Nanotube Transistors Using Chemical Doping Strategy
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2022-07-17 , DOI: 10.1002/aelm.202200424
Nian He 1, 2 , Qi Yuan 1, 2 , Yufei Wang 1, 2 , Yanmei Sun 1, 2 , Dianzhong Wen 1, 2
Affiliation  

Carbon nanotubes (CNTs) have attracted much attention in transistors because of their unique structure and electrical properties. However, the implementation of transistor polarity control and complementary logic functions remains a key challenge. In this work, the polarity of carbon nanotube transistors using chemical doping strategy is modulated. By triethyl oxonium hexachloro antimonate doping and polyethylene imine doping with chemically modified, p-type CNTs and n-type CNTs as the transistor channel of the bottom gate structure field effect transistors are prepared. An inverter is constructed by connecting p-type transistor and n-type transistor in series. The inverter has a voltage hysteresis window and gain over 20.5. A Schmitt trigger with operating frequency over 2 MHz is built based on high-low conversion of inverter output voltage during dual-scan has different threshold voltage characteristics. Two inverters are used to construct a ternary content-addressable memory cell with four transistors, which has an on/off ratio up to 104, a data retention characteristic of 104 s, and a good stability of more than 1000 cycles, indicating the great potential of practical application in future computing-in memory.

中文翻译:

采用化学掺杂策略的基于碳纳米管晶体管的逆变器和三进制内容可寻址存储器

碳纳米管(CNTs)因其独特的结构和电学特性在晶体管中引起了广泛关注。然而,晶体管极性控制和互补逻辑功能的实现仍然是一个关键挑战。在这项工作中,使用化学掺杂策略调制碳纳米管晶体管的极性。通过掺杂三乙基氧鎓六氯锑酸盐和掺杂化学改性的聚乙烯亚胺,制备了p型碳纳米管和n型碳纳米管作为底栅结构场效应晶体管的晶体管沟道。通过串联连接p型晶体管和n型晶体管构成反相器。逆变器具有电压迟滞窗口和超过 20.5 的增益。基于双扫描时逆变器输出电压的高低转换,构建了工作频率超过2MHz的施密特触发器,具有不同的阈值电压特性。两个反相器用于构建具有四个晶体管的三进制内容可寻址存储单元,其开/关比高达 10如图4所示,10 4 s的数据保持特性,以及超过1000次循环的良好稳定性,表明未来内存计算的实际应用潜力巨大。
更新日期:2022-07-17
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