Domain orientation engineering regulates the polarization direction of thin film and facilitates the enhancement of piezoelectric properties. A change in polarization direction implies a structural change in the piezoelectric thin film. In this work, some unexpected results are obtained by preparing three orientations of Bi_0.5Na_0.5TiO₃-based lead-free piezoelectric thin films to amplify this structural change. In distinction to the conventional perception, the piezoelectric properties decrease with increasing polarization direction. This anomaly is influenced by the concentration of structural defects, and rotation of the polarization direction may induce a change in the electronic structure of the material and hence in the concentration of structural defects. Ultimately, the suppression of the domain dynamics response by increasing structural defects leads to the worst piezoelectric properties for thin films with the traditionally perceived optimal (100) orientation. The revelation of this anomaly has implications for the design of the next generation of high-performance piezoelectric thin films.

中文翻译：

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极化旋转控制域动态响应调制无铅薄膜的压电特性

畴取向工程调节薄膜的极化方向并促进压电性能的增强。极化方向的变化意味着压电薄膜的结构变化。_{在这项工作中，通过制备三个取向的Bi 0.5} Na _0.5 TiO ₃获得了一些意想不到的结果基无铅压电薄膜来放大这种结构变化。与传统感知不同，压电特性随着极化方向的增加而降低。这种异常受结构缺陷浓度的影响，极化方向的旋转可能会引起材料电子结构的变化，从而导致结构缺陷浓度的变化。最终，通过增加结构缺陷来抑制域动力学响应导致具有传统感知的最佳（100）取向的薄膜的压电性能最差。这种异常现象的揭示对下一代高性能压电薄膜的设计具有重要意义。