Gallium nitride p-i-n ultraviolet (UV) photodetectors (PDs) were fabricated on homogenous bulk substrates. The PDs exhibit high performances at room temperature: 1) The dark current density is as low as 2.11 × 10⁻⁹ A/cm² and the detection rate is as high as 4.71 × 10¹⁴ cm⋅Hz^1/2⋅W⁻¹; 2) The UV/visible rejection ratio is about 3.1 × 10³ and the highest responsivity is about 0.184 A/W; 3) The peak quantum efficiency is about 65.9 % and the average value in the deep UV region is still>40 %; 4) The turn-on and turn-off switching time constants are about 1.25 μs and 2.5 μs, respectively. Nevertheless, at 400 K the peak responsivity and quantum efficiency drop to 0.137 A/W and 50.59 %, respectively. An acceptor-like state model is proposed to explain the degradation, emphasizing that: 1) As the effective generation centers, they release the electron-hole pairs to the conductance and valence band edges, enhancing the photoelectric response in the long-wavelength region; 2) As the non-radiative recombination centers, they compete with the band-edge recombination, decreasing the responsivity and quantum efficiency. Finally, the noise characteristics are briefly discussed, which suggests a dominant Brown noise at reverse biases.

氮化镓针式紫外 (UV) 光电探测器 (PD) 是在均质体基板上制造的。PD在室温下表现出高性能：1）暗电流密度低至2.11 × 10 ^-9 A/cm ²，检测率高达4.71 × 10 ¹⁴ cm· Hz ^1/2 ⋅W ^-1 ; 2) 紫外/可见光抑制比约为 3.1 × 10 ³最高响应度约为 0.184 A/W；3）峰值量子效率约为65.9%，深紫外区平均值仍>40%；4) 开启和关闭开关时间常数分别约为 1.25 μs 和 2.5 μs。然而，在 400 K 时，峰值响应度和量子效率分别下降到 0.137 A/W 和 50.59%。提出了类受体态模型来解释降解，强调：1）作为有效的产生中心，它们将电子-空穴对释放到电导带和价带边缘，增强了长波长区域的光电响应；2）作为非辐射复合中心，它们与带边复合竞争，降低了响应度和量子效率。最后，简要讨论噪声特性，