Beta-Gallium oxide (β-Ga₂O₃) has emerged as a very feasible semiconductor material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse material systems. The high breakdown electric field, high working temperature, and excellent Baliga's figure-of-merit (BFOM) of β-Ga₂O₃ represent an inspiring outlook of power electronic devices. β-Ga₂O₃-based materials and devices have been increasingly popular in recent years for power electronics, owing to their ability to generate high-quality bulk substrates at a low cost. In this review article, we describe the recent investigations on the interface engineering of the β-Ga₂O₃-based power devices. Meanwhile, different methods for enlightening the performances including breakdown voltage and on-resistance have been summarized. Improved ohmic connections by reducing contact resistance through interfacial engineering and interlayers such as conducting oxides of AZO, ITO, and related materials, as well as the development of selective ion implantation doping. Some solutions to problematic challenges, such as p-type doping difficulty and low thermal conductivity, are also provided and addressed. Transferring devices to another substrate or thinning down the substrate and using heat sinks as well as top-side heat extraction could help to mitigate the low thermal conductivity. The ion-cutting process for heterogeneous integration of a β-Ga₂O₃ thin film with a highly thermally conductive substrate is an innovative technology for overcoming β-Ga₂O₃ weak thermal conductivity in nature and realizing β-Ga₂O₃ full potential in power electronics. Finally, the viewpoint of β-Ga₂O₃-based devices for power electronic applications has been analyzed.

β-氧化镓（β-Ga ₂ O ₃）凭借其超宽带隙和多样化材料体系的优势，已成为一种非常可行的用于新探索的半导体材料。_{β-Ga 2} O ₃的高击穿电场、高工作温度和出色的 Baliga 品质因数 (BFOM)代表了电力电子器件的一个鼓舞人心的前景。近年来，基于β-Ga ₂ O ₃的材料和器件在电力电子领域越来越受欢迎，因为它们能够以低成本生成高质量的块状基板。_{在这篇评论文章中，我们描述了最近对 β-Ga 2} O ₃界面工程的研究。基于功率器件。同时，总结了不同的启发性能的方法，包括击穿电压和导通电阻。通过界面工程和中间层（例如 AZO、ITO 和相关材料的导电氧化物）以及选择性离子注入掺杂的开发来改善欧姆连接。还提供并解决了一些解决问题挑战的方法，例如 p 型掺杂困难和低导热率。将器件转移到另一个基板或减薄基板并使用散热器以及顶部散热可以帮助减轻低热导率。_{β-Ga 2} O ₃异质集成的离子切割工艺具有高导热基板的薄膜是克服自然界中β-Ga ₂ O ₃弱导热性，实现β-Ga ₂ O ₃在电力电子中的全部潜力的创新技术。最后，分析了用于电力电子应用的基于β-Ga ₂ O _{3的器件的观点。}