Abstract

The aim of this paper is to study the modes and determine the patterns of plasma-chemical processing in a fluoride plasma of a silicon surface locally modified with gallium ions. Experimental and theoretical studies of the interaction of the surface of silicon wafers with focused ion beams (FIB) and fluoride plasma are carried out. The general regularities of the influence of the FIB and plasma-chemical etching (PCE) modes on the etching rate, surface roughness, and the angle of inclination of the structure walls are determined, and the manifestation of activation and masking effects during the PCE of a silicon surface locally modified by FIB is established. It is found that, in the case of the masking effect, the selectivity is 195.26, and the rate of formation of structures by the combination of FIB and PCE methods is 3.23 nm/s.

中文翻译：

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结合聚焦离子束方法和等离子化学蚀刻在硅表面形成纳米级结构

摘要

本文的目的是研究模式并确定在用镓离子局部改性的硅表面的氟化物等离子体中的等离子体化学处理模式。对硅晶片表面与聚焦离子束 (FIB) 和氟化物等离子体的相互作用进行了实验和理论研究。确定了 FIB 和等离子化学刻蚀 (PCE) 模式对刻蚀速率、表面粗糙度和结构壁倾斜角度的影响的一般规律，以及在 PCE 过程中活化和掩蔽效应的表现形式。建立通过FIB局部改性的硅表面。发现在掩蔽效应的情况下，选择性为195.26，FIB和PCE结合的结构形成速率为3.23 nm/s。