Abstract

A new silicon CMOS nanotransistor with a cylindrical geometry of a fully enclosed variable-radius gate is discussed. A 2-D analytical model of the potential distribution and models of direct and subthreshold currents of a transistor with a truncated cone-shaped operating region based on it are developed. Changing the geometry of the transistor from the usual cylindrical shape improves the electrical-physical characteristics and allows us to compensate the limitations resulting from scaling. Numerical studies of conical prototypes demonstrate improved electrostatic performance at an optimized radius ratio of 0.83 compared to a conventional cylindrical structure in the control voltage range from 0 to 0.6 V. The conical structure features a higher transistor current, maximum current ratio I_on/I_off, low leakage current, and the slope of the subthreshold characteristic close to the theoretical limit. Thus, a conical architecture with an optimized radius ratio can replace a cylindrical structure for high-speed and low-voltage applications.

中文翻译：

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对具有全封闭可变半径栅极的硅圆柱形 CMOS 纳米晶体管进行建模

摘要

讨论了一种具有全封闭可变半径栅极的圆柱形几何形状的新型硅 CMOS 纳米晶体管。在此基础上，建立了具有截锥形工作区的晶体管的电位分布的二维分析模型和直流电流和亚阈值电流模型。从通常的圆柱形改变晶体管的几何形状可以改善电气物理特性，并允许我们补偿缩放造成的限制。锥形原型的数值研究表明，在 0 到 0.6 V 的控制电压范围内，与传统的圆柱形结构相比，在 0.83 的优化半径比下，静电性能得到了改善。锥形结构具有更高的晶体管电流、最大电流比I _on /I _off，低漏电流，且亚阈值特性的斜率接近理论极限。因此，具有优化半径比的锥形结构可以代替圆柱形结构用于高速和低压应用。