Abstract

Elements of nonvolatile electrically reprogrammable memory, in which information is encoded by the value of resistance (memristors), based on electroformed open sandwich TiN–SiO₂–W structures are made using thin-film technology. A significant effect of the presence of organic molecules in the insulating gap of open sandwich metal-dielectric-metal (MDM) structures on the nature of the process of their electroformation is shown. Removal of organic matter by annealing in an oil-free vacuum followed by electroformation results in only its first stage, i.e., the formation of a future conducting nanostructure nucleus. The second stage, the accumulation of particles of the conductive phase and the formation of a conductive medium, is absent, which manifests itself in low currents through the structure. At the same time, the second stage of electroformation is easily performed after placing the annealed structures in an oil vacuum, which ensures the flow of organic molecules to the surface of the insulating gap. The results obtained mean that the carbonaceous conducting medium formed from organic molecules plays a decisive role in the electrospinning process of such structures. A new method of electroformation is proposed, which makes it possible to practically exclude breakdowns of structures with a sharp increase in current, which increases the efficiency of this operation.

中文翻译：

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基于电铸开放夹层 MDM 结构的忆阻器中导电介质的形成机制

摘要

非易失性电可重编程存储器的元件，其中信息由电阻值（忆阻器）编码，基于电铸开式夹层 TiN-SiO ₂-W 结构采用薄膜技术制成。显示了在开放式夹层金属-电介质-金属 (MDM) 结构的绝缘间隙中存在有机分子对其电形成过程性质的显着影响。通过在无油真空中退火然后电铸去除有机物仅导致其第一阶段，即形成未来的导电纳米结构核。第二阶段，即导电相颗粒的积累和导电介质的形成，不存在，这表现为通过结构的低电流。同时，将退火后的结构置于油真空中后，可以轻松进行第二阶段的电铸，从而确保有机分子流向绝缘间隙表面。所得结果表明，由有机分子形成的碳质导电介质在这种结构的静电纺丝过程中起决定性作用。提出了一种新的电铸方法，该方法可以在电流急剧增加的情况下实际上排除结构的损坏，从而提高了该操作的效率。