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High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz
Optica ( IF 10.4 ) Pub Date : 2022-07-05 , DOI: 10.1364/optica.462609
Yuluan Xiang 1 , Hengzhen Cao 1 , Chaoyue Liu 1 , Jingshu Guo 1 , Daoxin Dai 1
Affiliation  

High-sensitivity and high-bandwidth receivers are always demanded for high-speed optical link systems. As a key element, an avalanche photodiode (APD) is often regarded as one of the most attractive options for achieving high sensitivity owing to the potential high internal gain. In this paper, a 48-GHz waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a lateral reach-through structure and fabricated with simplified processes. The fabricated APD shows a high primary responsivity of 0.93 A/W at the unit-gain voltage of {-} {4.7}\;\text{V}. It has an avalanche gain of 12.8 and a record gain-bandwidth product of {\sim}{615}\;\text{GHz} with an input optical power of {-} {15}\;\text{dBm} when operating at a bias voltage of {-} {14}\;\text{V}. The present Ge/Si APD is used successfully for high-speed data receiving, showing a sensitivity improvement about 7.6 dB for KP4-FEC operation (i.e., \text{BER} = {2.4}\times {{10}^{ - 4}}) with 50 Gbps non-return-to-zero (NRZ) data, compared with the case of using the reference PIN PD on the same chip. The sensitivity of the receiver with the present APD for NRZ signals is about {-} {21.3}\;\text{dBm}, {-} {17.8}\;\text{dBm}, and {-} {12.6}\;\text{dBm} for KP4-FEC operation with different data rates of 50 Gbps, 80 Gbps, and 100 Gbps, while the sensitivity for four-level pulse amplitude modulation signals is about {-} {13.2}\;\text{dBm} and {-} {11.3}\;\text{dBm} for KP4-FEC operation with different data rates of 25 and 50 Gbaud. Such high-performance APDs pave the way to achieve high-speed and high-sensitivity data transmissions.

中文翻译:

增益带宽积为 615 GHz 的高速波导 Ge/Si 雪崩光电二极管

高速光链路系统总是需要高灵敏度和高带宽的接收机。作为关键元件,雪崩光电二极管 (APD) 通常被认为是实现高灵敏度的最有吸引力的选择之一,因为它具有潜在的高内部增益。在本文中,工作在 O 波段(1310 nm)的 48 GHz 波导 Ge/Si 雪崩光电二极管被设计为具有横向贯通结构,并以简化的工艺制造。制造的 APD 在{-} {4.7}\;\text{V}的单位增益电压下显示出 0.93 A/W 的高初级响应度。它具有 12.8 的雪崩增益和创纪录的增益带宽积{\sim}{615}\;\text{GHz} ,工作时输入光功率为{-} {15}\;\text{dBm}在偏置电压{-} {14}\;\text{V}。目前的 Ge/Si APD 成功用于高速数据接收,KP4-FEC 操作的灵敏度提高了约 7.6 dB(即\text{BER} = {2.4}\times {{10}^{ - 4 }} ) 与 50 Gbps 不归零 (NRZ) 数据,与在同一芯片上使用参考 PIN PD 的情况相比。具有当前 APD 的接收机对 NRZ 信号的灵敏度约为{-} {21.3}\;\text{dBm} {-} {17.8}\;\text{dBm}{-} {12.6}\ ;\text{dBm}用于 KP4-FEC 操作,具有 50 Gbps、80 Gbps 和 100 Gbps 的不同数据速率,而对四级脉冲幅度调制信号的灵敏度约为{-} {13.2}\;\text{ dBm}{-} {11.3}\;\text{dBm}用于具有 25 和 50 Gbaud 不同数据速率的 KP4-FEC 操作。这种高性能APD为实现高速、高灵敏度的数据传输铺平了道路。
更新日期:2022-07-05
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