Spintronic devices, especially electric-field and spin–orbit torque driven magnetic tunnel junctions (MTJs), are promising candidates to replace the current memory and logic components for satisfying future computing demands. Current spin–orbit torque based MTJ devices with a single free layer and spin Hall channel still face high current density for switching. Here, 150-nm perpendicular MTJs are designed and fabricated with a synthetic-antiferromagnetic free layer and a bilayered spin Hall channel. The switching behavior is investigated via combination of forces from electric-field and spin–orbit torque, where the electric field can modulate the exchange coupling of the synthetic-antiferromagnetic free layer. Through an assistance of spin–orbit torque, bidirectional switching is obtained with switching current density as low as 3 × 10³ A cm⁻², which is two orders of magnitude lower than that of the current best reported values. These results suggest that electric-field switching of synthetic-antiferromagnetic MTJs could be a promising approach for reducing write current density of spintronic devices.

中文翻译：

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通过自旋轨道转矩辅助的电场实现合成-反铁磁磁隧道结的超低电流切换

自旋电子器件，尤其是电场和自旋轨道扭矩驱动的磁隧道结 (MTJ)，有望替代当前的存储器和逻辑组件，以满足未来的计算需求。当前具有单个自由层和自旋霍尔通道的基于自旋轨道扭矩的 MTJ 器件仍面临用于切换的高电流密度。在这里，150 nm 垂直 MTJ 被设计和制造，具有合成反铁磁自由层和双层自旋霍尔通道。通过结合来自电场和自旋轨道扭矩的力来研究切换行为，其中电场可以调节合成反铁磁自由层的交换耦合。通过自旋轨道转矩的辅助，实现双向开关，开关电流密度低至 3 × 10³ A cm ^-2，比当前最佳报告值低两个数量级。这些结果表明，合成反铁磁 MTJ 的电场切换可能是降低自旋电子器件写入电流密度的有前途的方法。