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Calculation and analysis of switching losses in IGBT devices based on switching transient processes
Journal of Power Electronics ( IF 1.4 ) Pub Date : 2022-07-08 , DOI: 10.1007/s43236-022-00477-z
Bin Hao , Cheng Peng , Xinling Tang , Zhibin Zhao

Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters.



中文翻译:

基于开关暂态过程的IGBT器件开关损耗计算与分析

准确揭示高压大功率IGBT器件开关瞬态功率损耗的产生机理及其与系统参数的数学关系对于换流设备的器件选型和电路设计具有重要意义。为了揭示产生开关损耗的机制,本文详细分析了基本换流电路中 IGBT 器件的开关瞬态过程。然后提出了一种基于有限状态机(FSM)的IGBT器件开关损耗的精确计算方法,并验证了该方法的正确性。为了进一步揭示开关损耗、器件参数和环路参数之间的数学关系,

更新日期:2022-07-08
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