A self-consistent two-dimensional fluid model was used to study HBr/Cl₂/O₂ plasma discharge. A comprehensive set of 150 reactions comprising different processes (i.e., dissociation, ionization, and excitation) in tandem with 32 plasma species were considered in the computational model. The results revealed that the plasma reactions were dominated by 11 species (i.e., Cl, Cl⁺, Cl₂⁺, H, H₂, HCl, HCl⁺, Br, Br⁺, Br₂, and HBr⁺), where the neutral species outnumbered the charged species. The density of charged species in the plasma reactor followed a bell shaped while the neutral species followed a double humped shaped distribution. The increase in plasma O₂ concentration resulted in an initial decrease, followed by a gradual increase in the generation of Cl, Br, H, Cl⁺, and Br⁺ in the plasma discharge. A lower/higher concentration of oxygen in the plasma stimulated the densities of neutral/charged species, which facilitated the chemical/physical etching pathway. These findings provide new insights into the type of etching species and their optimization in the HBr/Cl₂/O₂ plasma discharge, with potential applications in the semiconductor industry.

中文翻译：

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电容耦合 HBr/Cl2/O2 等离子体的计算表征

采用自洽二维流体模型研究 HBr/Cl ₂ /O ₂等离子体放电。在计算模型中考虑了包含不同过程（即解离、电离和激发）的 150 种综合反应以及 32 种等离子体物质。结果表明，等离子体反应以11种物质为主（即Cl、Cl ⁺、Cl ₂ ⁺、H、H ₂、HCl、HCl ⁺、Br、Br ⁺、Br ₂和HBr ⁺)，其中中性物质的数量超过带电物质。等离子体反应器中带电物质的密度呈钟形分布，而中性物质呈双峰形分布。等离子体O ₂浓度的增加导致初始降低，随后在等离子体放电中Cl、Br、H、Cl ⁺和Br ^{+的生成逐渐增加。}等离子体中较低/较高浓度的氧刺激了中性/带电物质的密度，这促进了化学/物理蚀刻途径。_{这些发现为 HBr/Cl 2} /O ₂中蚀刻物质的类型及其优化提供了新的见解等离子放电，在半导体行业具有潜在应用。